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参数资料
| 型号： | IRHMS593160 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗辐射功率MOSFET的通孔（低阻值到254AA） |
| 文件页数： | 2/8页 |
| 文件大小： | 174K |
| 代理商： | IRHMS593160 |
IRHMS597160
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
VSD
trr
QRR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-45*
-180
-5.0
200
1.6
V
ns
μ
C
T
j
= 25°C, IS = -45A, VGS = 0V
Tj = 25°C, IF =-45A, di/dt
≤
-100A/
μ
s
VDD
≤
-25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-100
—
Typ
—
-0.13
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
0.05
VGS = -12V, ID = -30A
-2.0
24
—
—
—
—
—
—
-4.0
—
-10 A
-25
VGS = 0V, TJ = 125°C
-100
100 nA
170 VGS =-12V, ID = -45A
65
nC
30
35 VDD = -50V, ID = -45A
140
VGS =-12V, RG = 1.2
70
45
— nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
V
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -30A
S (
)
VDS = -80V,
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
VGS = -20V
VDS = -50V
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
6110
1574
115
— VGS = 0V, VDS = -25V
—
pF
—
f = 1.0MHz
ns
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.6
—
48
°C/W
Typical socket mount
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