参数资料
型号: IRHMS597160
厂商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
中文描述: 抗辐射功率MOSFET的通孔(低阻值到254AA)
文件页数: 1/8页
文件大小: 174K
代理商: IRHMS597160
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
-45*
-30
-180
208
1.67
±20
480
-45
20.8
-6.0
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063in./1.6mm from case for 10s)
9.3 ( Typical )
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597160
100V, P-CHANNEL
TECHNOLOGY
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHMS597160 100K Rads (Si) 0.05
-45A*
IRHMS593160 300K Rads (Si) 0.05
-45A*
I
D
For footnotes refer to the last page
Features:
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
High Electrical Conductive Package
Low-Ohmic
TO-254AA
PD - 94283B
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