参数资料
型号: IRHMS57264SE
厂商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL
中文描述: 抗辐射功率MOSFET的通孔(低阻值到254AA)250V,N沟道
文件页数: 8/8页
文件大小: 183K
代理商: IRHMS57264SE
IRHMS57264SE, JANSR2N7477T1
Footnotes:
Pre-Irradiation
8
www.irf.com
Pulse width
300
μ
s; Duty Cycle
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 0.38mH
Peak IL = 37A, VGS =12V
ISD
37A, di/dt
1040A/
μ
s,
VDD
250V, TJ
150°C
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 11/2004
Case Outline and Dimensions — Low-Ohmic TO-254AA
3.81 [.150]
0.12 [.005]
1.27 [.050]
1.02 [.040]
6.60 [.260]
6.32 [.249]
C
14.48 [.570]
12.95 [.510]
0.36 [.014]
B A
1.14 [.045]
0.89 [.035]
2X
3.81 [.150]
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
A
1
2
3
13.84 [.545]
13.59 [.535]
0.84 [.033]
MAX.
B
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
NOTES:
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
相关PDF资料
PDF描述
IRHMS593160 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597160 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHN7054 HEXFET Transistor(HEXFET 晶体管)
IRHN8054 HEXFET Transistor(HEXFET 晶体管)
IRHN7130 TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
相关代理商/技术参数
参数描述
IRHMS57264SESCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHMS57Z60 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHMS58064 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHMS58160 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHMS58Z60 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk