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参数资料
| 型号： | IRHM57160 |
| 厂商： | International Rectifier |
| 英文描述： | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率N沟道MOSFET) |
| 中文描述： | 100V的N通道通孔抗辐射功率MOSFET（100V的，通孔安装抗辐射功率?沟道MOSFET的） |
| 文件页数： | 2/8页 |
| 文件大小： | 108K |
| 代理商： | IRHM57160 |
IRHM57160
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
* Current is limited by internal wire diameter
Min Typ
—
—
—
—
—
Max Units
35*
140
1.2
270
1.9
Test Conditions
—
—
—
—
—
V
ns
μ
C
T
j
= 25°C, IS = 35A, VGS = 0V
Tj = 25°C, IF = 35A, di/dt
≥
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthCS
Case-to-Sink
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
0.21
—
—
Units
Test Conditions
0.50
—
48
°C/W
Typical socket mount
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
Typ
—
0.013
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.018
VGS = 12V, ID = 35A
2.0
42
—
—
—
—
—
—
4.0
—
10
25
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 50V
S (
)
μ
A
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
160
45
65
35
75
75
35
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
nC
VDD = 50V, ID = 35A
RG = 2.35
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
5620
1583
50
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
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