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参数资料
| 型号： | IRHF7330SE |
| 厂商： | International Rectifier |
| 英文描述： | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道 单事件效应 Rad Hard HEXFET技术晶体管) |
| 中文描述： | N通道单粒子效应（见）拉德硬的HEXFET晶体管（不适用沟道单事件效应拉德硬盘的HEXFET技术晶体管） |
| 文件页数： | 2/8页 |
| 文件大小： | 94K |
| 代理商： | IRHF7330SE |
IRHF7330SE Devices
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
400
—
Typ
—
0.50
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
1.2
VGS = 12V, ID = 1.9A
VGS(th)
gfs
IDSS
2.5
1.3
—
—
—
—
—
—
4.5
—
50
250
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 1.9A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 3.0A
VDS = Max Rating x 0.5
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
41
7.0
20
35
62
58
58
—
nC
VDD = 200V, ID = 3.0A,
RG = 7.5
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
555
160
60
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
ing the internal inductances.
μ
A
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
3.0
12
Test Conditions
—
—
Modified MOSFET symbol showing the integra
rverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
516
3.0
V
ns
μ
C
T
j
= 25°C, IS = 3.0A, VGS = 0V
Tj = 25°C, IF = 3.0A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
—
Units
Test Conditions
5.0
175 Typical socket mount
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相关代理商/技术参数 |
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| IRHF7330SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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