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参数资料
| 型号： | IRHF7330SE |
| 厂商： | International Rectifier |
| 英文描述： | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道 单事件效应 Rad Hard HEXFET技术晶体管) |
| 中文描述： | N通道单粒子效应（见）拉德硬的HEXFET晶体管（不适用沟道单事件效应拉德硬盘的HEXFET技术晶体管） |
| 文件页数： | 8/8页 |
| 文件大小： | 94K |
| 代理商： | IRHF7330SE |
IRHF7330SE Devices
Pre-Irradiation
8
www.irf.com
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ Starting TJ = 25°C,
EAS = [0.5 * L * (IL
Peak IL = 3.0A, VGS =12 V, 25
≤
RG
≤
200
ISD
≤
3.0A, di/dt
≤
400A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 7.5
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
2
) ], V
=50V
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-irradiation)
applied and VGS = 0 during irradiation per
MlL-STD -750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 2/99
Case Outline and Dimensions — TO-205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
相关PDF资料 |
PDF描述 |
|---|---|
| IRHF7430SE | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道 单事件效应 Rad Hard HEXFET技术晶体管) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHF7330SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF7330SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF7430SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHF7430SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF7430SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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