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参数资料
| 型号： | IRHG93110 |
| 厂商： | International Rectifier |
| 英文描述： | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率MOSFET) |
| 中文描述： | 通孔抗辐射功率MOSFET（100V的，通孔安装抗辐射功率MOSFET的） |
| 文件页数： | 4/8页 |
| 文件大小： | 103K |
| 代理商： | IRHG93110 |
IRHG9110
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
TOP
BOTTOM
VGS
-V , Drain-to-Source Voltage (V)
-
D
-5.0V
0.01
0.1
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
TOP
BOTTOM
VGS
-7.0V
-V , Drain-to-Source Voltage (V)
-
D
-5.0V
1
10
100
5
7
9
11
13
15
VDS
20μs PULSE WIDTH
-V , Gate-to-Source Voltage (V)
-
D
T = 25 C
T = 150 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
-12V
-0.75A
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