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参数资料
| 型号： | IRHG93110 |
| 厂商： | International Rectifier |
| 英文描述： | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率MOSFET) |
| 中文描述： | 通孔抗辐射功率MOSFET（100V的，通孔安装抗辐射功率MOSFET的） |
| 文件页数： | 5/8页 |
| 文件大小： | 103K |
| 代理商： | IRHG93110 |
www.irf.com
5
Pre-Irradiation
IRHG9110
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
100
200
300
400
500
600
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
14
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-0.75A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
0.1
1
10
100
0.0
1.0
2.0
3.0
4.0
5.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
°
T = 150 C
0.1
1
10
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
D
-
1ms
10ms
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