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参数资料
| 型号： | IRHF9230 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶体管) |
| 中文描述： | 的HEXFET晶体管（之HEXFET晶体管） |
| 文件页数： | 2/8页 |
| 文件大小： | 121K |
| 代理商： | IRHF9230 |
IRHF9230, JANSR2N7390 Device
Pre-Irradiation
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
5.0
°C/W
RthJA
Junction-to-Ambient
—
175
—
Typical socket mount
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-200
—
Typ
—
-0.25
Max Units
—
—
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
D
BVDSS/
D
TJ
V
V/°C
RDS(on)
—
—
-2.0
2.5
—
—
—
—
—
—
—
—
0.80
0.92
-4.0
—
-25
-250
VGS = -12V, ID = -2.4A
VGS = -12V, ID = -4.0A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -4.0A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -4.0A
VDS = Max Rating x 0.5
W
VGS(th)
gfs
IDSS
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
-100
100
45
10
25
30
30
75
65
—
nC
VDD = -50V, ID = -4.0A,
RG = 7.5
W
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
190
45
—
—
—
VGS = 0V, VDS = -25V
f = 1.0MHz
pF
nA
W
nH
ns
Measured fromdrain lead,
6mm(0.25 in) frompackage
to center of die.
Measured fromsource lead,
6mm(0.25 in) frompackage
to source bonding pad.
Modified MOSFET symbol show-
m
A
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
-4.0
-16
Test Conditions
—
—
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-5.0
400
1.6
V
ns
m
C
T
j
= 25°C, IS = -4.0A, VGS = 0V
Tj = 25°C, IF = -4.0A, di/dt
￡
-100A/
m
s
VDD
￡
-100V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
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