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参数资料
| 型号： | IRHF7430SE |
| 厂商： | International Rectifier |
| 英文描述： | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道 单事件效应 Rad Hard HEXFET技术晶体管) |
| 中文描述： | N通道单粒子效应（见）拉德硬的HEXFET晶体管（不适用沟道单事件效应拉德硬盘的HEXFET技术晶体管） |
| 文件页数： | 3/8页 |
| 文件大小： | 91K |
| 代理商： | IRHF7430SE |
IRHF7430SE Devices
www.irf.com
3
Table 1. Low Dose Rate
Parameter
IRHF7430SE
100K Rads (Si)
Min
500
2.0
—
—
—
—
Units
Test Conditions
Max
—
4.5
100
-100
50
1.6
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
= 1.6A
nA
μA
V
SD
—
1.4
V
TC = 25°C, IS = 2.6A,V
GS
= 0V
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
400
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
400
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
—
2.3
15
27
—
—
—
—
—
—
2.3
3
133
—
—
—
A
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Cu 28
3x 10
5
~43
-5
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per note
5 and a V
DS
bias condition equal to 80% of the de-
vice rated voltage per note 6. Post-irradiation limits
of the devices irradiated to 1 x 10
5
Rads (Si) are pre-
sented in Table 1, column 1, IRHF7430SE. The val-
ues in Table 1 will be met for either of the two low
dose rate test circuits that are used. Both pre- and
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 1 x 10
5
Rads (Si) the
only parameter limit change is V
GSTh
minimum .
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec ( See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
characterization is shown in Table 3.
Br
38
39
3x 10
5
375
350
-5
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