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参数资料
| 型号： | IRHM7160 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶体管) |
| 中文描述： | 的HEXFET晶体管（之HEXFET晶体管） |
| 文件页数： | 3/8页 |
| 文件大小： | 137K |
| 代理商： | IRHM7160 |
IRHM7160, IRHM8160 Devices
www.irf.com
3
Radiation Performance of Rad Hard HEXFETs
Table 1. Low Dose Rate
Parameter
IRHM7160 IRHM8160
100K Rads (Si) 1000K Rads (Si)
Units
Min
Max
Min
100
—
100
2.0
4.0
1.25
—
100
—
—
-100
—
—
25
—
—
0.045
—
Test Conditions
Max
—
4.5
100
-100
50
0.062
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= +20V
V
GS
= -20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
=35A
nA
μA
V
SD
—
1.8
—
1.8
V
TC = 25°C, IS = 35A,V
GS
= 0V
Radiation Characteristics
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier com-
prises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD- 750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 5 and a V
bias condition equal to 80% of the
device rated voltage per note 6. Pre- and post- irradia-
tion limits of the devices irradiated to 1 x 10
5
Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRHM7160. Post-irradiation limits of the de-
vices irradiated to 1 x 10
6
Rads (Si) are presented in
Table 1, column 2, IRHM8160. The values in Table 1
will be met for either of the two low dose rate test
circuits that are used. Both pre- and post-irradiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide
a direct comparison.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
characterization is shown in Table 3.
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
80
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
Test Conditions
V
DSS
80
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
160 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
1.0
140
—
—
—
800
—
— 140 —
—
—
0.5
—
A
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Ni 28
1x 10
5
~41 100
-5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM7160D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7160U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM7230D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254VAR |
| IRHM7230U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254VAR |
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