参数资料
型号: IRHM54Z60
厂商: International Rectifier
英文描述: 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET)
中文描述: 30V的N通道通孔抗辐射功率MOSFET(30V的,通孔安装抗辐射功率?沟道MOSFET的)
文件页数: 5/8页
文件大小: 106K
代理商: IRHM54Z60
www.irf.com
5
Pre-Irradiation
IRHM57Z60
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
50
Q , Total Gate Charge (nC)
100
150
200
250
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
35A
V
= 15V
DS
V
= 24V
DS
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
1ms
10ms
1
10
100
0
3000
6000
9000
12000
15000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
相关PDF资料
PDF描述
IRHM53Z60 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET)
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IRHM58Z60 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOSFET)
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