参数资料
型号: IRHM57264SE
厂商: International Rectifier
英文描述: Thru-Hole Radiation Hardened Power MOSFET(通孔安装抗辐射功率MOSFET)
中文描述: 通孔抗辐射功率MOSFET(通孔安装抗辐射功率MOSFET的)
文件页数: 1/8页
文件大小: 94K
代理商: IRHM57264SE
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature 300 (0.063 in.(1.6 mm from case for 10s))
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
35*
26
140
250
2.0
±20
500
35
25
5.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
9.3 ( Typical)
g
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254)
IRHM57264SE
250V, N-CHANNEL
TECHNOLOGY
R
5
3/2/00
www.irf.com
1
* Current is limited by internal wire diameter
For footnotes refer to the last page
Features:
n
Single Event Effect (SEE) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Ratings
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electically Isolated
n
Ceramic Eyelets
n
Light Weight
TO-254
Pre-Irradiation
Product Summary
Part Number Radiation Level R
DS(on)
IRHM57264SE 100K Rads (Si) 0.066
35A
*
I
D
PD - 93798A
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