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参数资料
| 型号： | IRHLF680Z4 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| 中文描述： | 抗辐射功率MOSFET的逻辑电平 |
| 文件页数： | 6/8页 |
| 文件大小： | 149K |
| 代理商： | IRHLF680Z4 |
IRHLF670Z4
Pre-Irradiation
6
www.irf.com
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
μs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
GS
25
50
T , Case Temperature (°
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
0.1
0.00001
1
10
100
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T =P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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