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| 型号： | IRHN8130 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 100V的，的Rds（on）\u003d 0.18ohm，身份证\u003d 14） |
| 文件页数： | 3/14页 |
| 文件大小： | 508K |
| 代理商： | IRHN8130 |
Radiation Performance of Mega Rad Hard HEXFETs
IRHN7130, IRHN8130 Devices
Radiation Characteristics
International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and
figure 8a and a V
DSS
bias condition equal to 80%
of the device rated voltage per note 7 and figure
8b. Pre- and post-radiation limits of the devices irra-
diated to 1 x 10
5
Rads (Si) are identical and are pre-
sented in Table 1, column 1, IRHN7130. Device
performance limits at a post radiation level of 1 x
10
6
Rads (Si) are presented in Table 1, column 2,
IRHN8130. The values in Table 1 will be met for ei-
ther of the two low dose rate test circuits that are
used. Typical delta curves showing radiation re-
sponse appear in figures 1 through 5. Typical post-
radiation curves appear in figures 10 through 17.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si), no change in limits are specified in DC
parameters. At a radiation level of 1 x10
6
Rads (Si),
leakage remains low and the device is usable with
no change in drive circuitry required.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec. Photocurrent and transient voltage wave-
forms are shown in figure 7, and the recommended
test circuit to be used is shown in figure 9.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The ef-
fects on bulk silicon of the type used by Interna-
tional Rectifier on RAD HARD HEXFETs are shown
in figure 6. Single Event Effects characterization is
shown in Table 3.
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
80
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
80
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
200 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
100
— 1000
—
—
—
—
0.5
100
—
—
—
A
—
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~41
V
DS
Bias
(V)
100
V
GS
Bias
(V)
-5
Parameter
Typ.
Units
Ion
BVDSS
100
V
Ni
Table 1. Low Dose Rate
Parameter
IRHN7130
100K Rads (Si) 1000K Rads (Si)
Units
min.
max.
min.
100
—
100
2.0
4.0
1.25
—
100
—
—
-100
—
—
25
—
—
0.18
—
IRHN8130
Test Conditions
max.
—
4.5
100
-100
25
0.24
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0 mA
V
GS
= V
DS
, I
D
= 1.0 mA
V
GS
= +20V
V
GS
= -20V
V
DS
= 0.8 x Max Rating, V
GS
= 0
V
GS
= 12V, I
D
= 9A
nA
μ
A
V
SD
—
1.8
—
1.8
V
TC = 25°C, IS = 14A,V
GS
= 0V
To Order
Next Data Sheet
Index
Previous Datasheet
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