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参数资料
| 型号： | IRHLF730Z4 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| 中文描述： | 抗辐射逻辑电平功率MOSFET通孔（到39） |
| 文件页数： | 5/8页 |
| 文件大小： | 150K |
| 代理商： | IRHLF730Z4 |
www.irf.com
5
Pre-Irradiation
IRHLF770Z4
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
& (
+
& (
+ &
IS
)
)
"
*"#$%
TJ = 25°C
1
10
100
0
50
100
150
200
250
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
1
Q , Total Gate Charge (nC)
2
3
4
5
0
2
4
6
8
10
12
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
1.6A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
ID
"&#$%
!"#$%
,
,
-./-00 /./1
2
BY RDS(on)
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