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参数资料
| 型号： | IRHLF670Z4 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| 中文描述： | 抗辐射功率MOSFET的逻辑电平 |
| 文件页数： | 3/8页 |
| 文件大小： | 149K |
| 代理商： | IRHLF670Z4 |
www.irf.com
3
Radiation Characteristics
IRHLF670Z4
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 60 — 60 — V V
GS
= 0V, I
D
= 250
μ
A
V
GS(th)
Gate Threshold Voltage
1.0 2.0 1.0 2.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 1.0 — 10 μA V
DS
= 48V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.5 — 0.5
V
GS
= 4.5V, I
D
= 1.0A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— 1.2 —
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V
V
GS
= -10 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHLF670Z4, IRHLF630Z4 and IRHLF640Z4
2. Part number IRHLF680Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Fig a.
Single Event Effect, Safe Operating Area
1.2 V V
GS
= 0V, IS = 1.6A
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(μm)
@VGS=
0V
@VGS=
-2V
@VGS= @VGS= @VGS= @VGS= @VGS=
-4V
-5V
-6V
@VGS=
-10V
-7V
-8V
Br
I
Au
37.3
59.9
82.3
285
345
357
36.8
32.7
357
60
60
60
60
60
60
60
60
60
60
60
60
60
60
-
35
20
-
30
15
-
20
-
-
0
10
20
30
40
50
60
70
-12
-10
-8
-6
-4
-2
0
VGS
V
Br
I
Au
相关PDF资料 |
PDF描述 |
|---|---|
| IRHLF680Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| IRHLF730Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| IRHLF740Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| IRHLF770Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| IRHLF780Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHLF680Z4 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| IRHLF6930Z4 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE |
| IRHLF6970Z4 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE |
| IRHLF730Z4 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 1.6A 3PIN TO-39 - Rail/Tube |
| IRHLF730Z4SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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