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参数资料
| 型号： | IRHLF670Z4 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| 中文描述： | 抗辐射功率MOSFET的逻辑电平 |
| 文件页数： | 2/8页 |
| 文件大小： | 149K |
| 代理商： | IRHLF670Z4 |
IRHLF670Z4
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
1.6*
6.4
1.2
100
150
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 1.6A, VGS = 0V
Tj = 25°C, IF = 1.6A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
Typ
—
0.08
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.50
VGS = 4.5V, ID = 1.0A
1.0
1.1
—
—
—
—
—
—
2.0
—
1.0 A
10
VGS = 0V, TJ =125°C
100
-100
3.6
VGS = 5.0V, ID = 1.6A
1.5
nC
1.8
8.0
VDD = 30V, ID = 1.6A,
20 ns
20
15
7.0 —
Measured from Drain lead (6mm /0.25in
from package) to Source lead(6mm/0.25in
V
VDS = VGS, ID = 250
μ
A
VDS = 10V, IDS = 1.0A
S (
)
VDS = 48V,
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
VGS = 10V
VGS = -10V
VDS = 30V
from packge)with Source wire internally
bonded from Source pin to Drain pad
152
—
39
—
pF
1.6
—
Ciss
Coss
Crss
Rg Gate Resistance
— 14 —
f = 5.0MHz, open drain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
nA
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
25
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF6970Z4
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