参数资料
型号: IRHG54110
厂商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
中文描述: 抗辐射功率MOSFET的通孔(莫- 036)
文件页数: 5/8页
文件大小: 112K
代理商: IRHG54110
www.irf.com
5
Pre-Irradiation
IRHG57110
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
200
400
600
800
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
4
8
12
16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
1.6A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
相关PDF资料
PDF描述
IRHG57110 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG9110 Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率MOSFET)
IRHG93110 Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率MOSFET)
IRHLF630Z4 RADIATION HARDENED LOGIC LEVEL POWER MOSFET
IRHLF640Z4 RADIATION HARDENED LOGIC LEVEL POWER MOSFET
相关代理商/技术参数
参数描述
IRHG563110 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
IRHG567110 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 1.6A/0.96A 14PIN MO-036AB - Rail/Tube
IRHG567110SCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHG567110SCV 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHG57110 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 1.6A 14PIN MO-036AB - Rail/Tube