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参数资料
| 型号： | IRHG54110 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) |
| 中文描述： | 抗辐射功率MOSFET的通孔（莫- 036） |
| 文件页数： | 3/8页 |
| 文件大小： | 112K |
| 代理商： | IRHG54110 |
www.irf.com
3
Pre-Irradiation
IRHG57110
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
(Per Die)
Parameter
Up to 600K Rads(Si)
1
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0
4.0 2.0 4.5 V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
—
100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
—
10 — 25 μA V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.226 — 0.246
V
GS
= 12V, I
D
= 1.0A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
— 0.29 — 0.31
V
GS
= 12V, I
D
= 1.0A
On-State Resistance (MO-036AB)
V
SD
Diode Forward Voltage
—
1.2 — 1.2 V V
GS
= 0V, IS = 1.6A
Units
Test Conditions
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHG57110, IRHG53110, IRHG54110
2. Part number IRHG58110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
1000K Rads (Si)
2
For footnotes refer to the last page
Fig a.
Single Event Effect, Safe Operating Area
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-12.5V @V
=-15V
Br
36.7
309 39.5 100 100 100 100 100
I
59.8
341 32.5 100 100 100 90 25
LET
Energy Range
V
DS
(V)
@V
=-20V
80
20
0
20
40
60
80
100
120
-20
-15
-10
-5
0
VGS
V
Br
I
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| IRHG563110 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL |
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| IRHG57110 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 1.6A 14PIN MO-036AB - Rail/Tube |
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