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参数资料
| 型号： | IRHF57Z30 |
| 厂商： | International Rectifier |
| 英文描述： | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安装抗辐射功率N沟道MOS场效应管) |
| 中文描述： | 30V的N通道通孔抗辐射功率MOSFET（30V的，通孔安装抗辐射功率?沟道马鞍山场效应管） |
| 文件页数： | 8/8页 |
| 文件大小： | 128K |
| 代理商： | IRHF57Z30 |
IRHF57Z30
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 20V, starting TJ = 25°C, L= 7.2 mH
Peak IL = 12A, VGS = 12V
ISD
≤
12A, di/dt
≤
135A/
μ
s,
VDD
≤
30V, TJ
≤
150°C
Case Outline and Dimensions — TO-205AF (Modified TO-39)
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 12/99
Footnotes:
LEGEND
1- SOURCE
2- GATE
3- DRAIN
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相关代理商/技术参数 |
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|---|---|
| IRHF58034 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF58034CM | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
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| IRHF58Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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