- 您现在的位置：买卖IC网 > PDF目录377521 > IRHG9110 (International Rectifier) Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率MOSFET) PDF资料下载
参数资料
| 型号： | IRHG9110 |
| 厂商： | International Rectifier |
| 英文描述： | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率MOSFET) |
| 中文描述： | 通孔抗辐射功率MOSFET（100V的，通孔安装抗辐射功率MOSFET的） |
| 文件页数： | 2/8页 |
| 文件大小： | 103K |
| 代理商： | IRHG9110 |
IRHG9110
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
-0.75
-3.0
-2.5
90
257
Test Conditions
—
—
—
—
—
V
nS
nC
T
j
= 25°C, IS = -0.75A, VGS = 0V
Tj = 25°C, IF = -0.75A, di/dt
≥
-100A/
μ
s
VDD
≤
-25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
—
Units
Test Conditions
17
90
Typical socket mount
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-100
—
Typ
—
-0.11
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
-2.0
0.6
—
—
—
—
—
—
—
—
1.2
1.1
-4.0
—
-25
-250
VGS = -12V, ID = -0.75A
VGS = -12V, ID =- 0.5A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -0.5A
VDS= -80V, VGS= 0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = - 20V
VGS = 20V
VGS = -12V, ID = -0.75A,
VDS = -50V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
19
4.0
4.3
22
19
66
51
— nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
nC
VDD = -50V, ID = -0.75A,
RG = 24
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
335
100
22
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
ns
μ
A
相关PDF资料 |
PDF描述 |
|---|---|
| IRHG93110 | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率MOSFET) |
| IRHLF630Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| IRHLF640Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| IRHLF670Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| IRHLF680Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHG9110SCS | 制造商:International Rectifier 功能描述:100V 1.000A HEXFET RADHARD - Rail/Tube |
| IRHG9110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG93110 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
| IRHI7360SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHI7360SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
发布紧急采购，3分钟左右您将得到回复。