- 您现在的位置：买卖IC网 > PDF目录377504 > IRF630NS (International Rectifier) Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) PDF资料下载
参数资料
| 型号： | IRF630NS |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.30ohm，身份证\u003d 9.3A） |
| 文件页数： | 1/11页 |
| 文件大小： | 155K |
| 代理商： | IRF630NS |
HEXFET
Power MOSFET
10/11/00
Parameter
Max.
9.3
6.5
37
82
0.5
±20
94
9.3
8.2
8.1
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to +175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Description
Fifth Generation HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
V
DSS
= 200V
R
DS(on)
= 0.30
I
D
= 9.3A
S
D
G
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Ease of Paralleling
l
Simple Drive Requirements
D
2
Pak
IRF630NS
TO-220AB
IRF630N
TO-262
IRF630NL
IRF630N
IRF630NS
IRF630NL
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for low-
profile application.
www.irf.com
1
PD - 94005A
相关PDF资料 |
PDF描述 |
|---|---|
| IRF630NSTRR | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB |
| IRF634N | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) |
| IRF634NL | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) |
| IRF634NS | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) |
| IRF634NSTRL | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF630NSPBF | 功能描述:MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF630NSTRL | 功能描述:MOSFET N-CH 200V 9.3A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF630NSTRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R |
| IRF630NSTRLPBF | 功能描述:MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF630NSTRR | 功能描述:MOSFET N-CH 200V 9.3A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。