参数资料
型号: IRF630NS
厂商: International Rectifier
英文描述: Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
中文描述: 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.30ohm,身份证\u003d 9.3A)
文件页数: 11/11页
文件大小: 155K
代理商: IRF630NS
IRF630N/S/L
www.irf.com
11
I
SD
5.4A, di/dt
280A/μs, V
DD
V
(BR)DSS
, T
J
175°C.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 6.5mH
R
G
= 25
, I
AS
= 5.4A.
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
400μs; duty cycle
2%.
This is only applied to TO-220AB package.
D
2
Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
相关PDF资料
PDF描述
IRF630NSTRR TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB
IRF634N Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)
IRF634NL Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)
IRF634NS Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)
IRF634NSTRL TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB
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IRF630NSTRR 功能描述:MOSFET N-CH 200V 9.3A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件