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参数资料
| 型号： | IRF5Y31N20 |
| 厂商： | International Rectifier |
| 英文描述： | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes |
| 中文描述： | 功率MOSFET N沟道（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.092ohm，身份证\u003d 18A条*） |
| 文件页数： | 2/7页 |
| 文件大小： | 99K |
| 代理商： | IRF5Y31N20 |
IRF5Y31N20
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
Typ
—
0.27
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.092
VGS = 10V, ID = 14A
3.0
14
—
—
—
—
—
—
5.5
—
25
250
V
VDS = VGS, ID = 250
μ
A
VDS =15V, IDS = 14A
VDS = 200V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 18A
VDS = 160V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
100
32
46
30
148
50
27
—
nC
VDD = 100V, ID = 18A,
VGS = 10V, RG = 2.5
Measured from drain lead (6mm /
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
VGS = 0V, VDS = 25V
pF
f = 1.0MHz
l Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2480
370
73
—
—
—
nA
nH
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
1.25
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min Typ
—
—
—
—
—
Max Units
18*
72
1.3
300
2.3
Test Conditions
—
—
—
—
—
V
ns
μ
C
T
j
= 25°C, IS = 18A, VGS = 0V
Tj = 25°C, IF = 18A, di/dt
≤
100A/
μ
s
VDD
≤
25V
A
* Current is limited by package
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