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参数资料
| 型号： | IRF5Y31N20 |
| 厂商： | International Rectifier |
| 英文描述： | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes |
| 中文描述： | 功率MOSFET N沟道（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.092ohm，身份证\u003d 18A条*） |
| 文件页数： | 5/7页 |
| 文件大小： | 99K |
| 代理商： | IRF5Y31N20 |
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5
IRF5Y31N20
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10a.
Switching Time Test Circuit
V
DS
Pulse Width
≤ 1
μs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
+
-
V
DD
V
GS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T =P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
T , Case Temperature (°
75
100
125
150
0
4
8
12
16
20
24
I
D
LIMITED BY PACKAGE
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