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参数资料
| 型号： | IRF5210 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d- 100V的，的Rds（on）\u003d 0.06ohm，身份证\u003d- 40A条） |
| 文件页数： | 1/8页 |
| 文件大小： | 125K |
| 代理商： | IRF5210 |
IRF5210
HEXFET
Power MOSFET
PD - 91434A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Parameter
Max.
-40
-29
-140
200
1.3
± 20
780
-21
20
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= -100V
R
DS(on)
= 0.06
I
D
= -40A
TO-220AB
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
Description
5/13/98
S
D
G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF5210HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 40A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 40A 3PIN TO-220AB - Rail/Tube 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRF5210L | 功能描述:MOSFET P-CH 100V 40A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF5210LHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 40A 3-Pin(3+Tab) TO-262 |
| IRF5210LPBF | 功能描述:MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF5210PBF | 功能描述:MOSFET MOSFT PCh -100V -40A 60mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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