- 您现在的位置：买卖IC网 > PDF目录377504 > IRF530FI (意法半导体) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PDF资料下载
参数资料
| 型号： | IRF530FI |
| 厂商： | 意法半导体 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增强型功率MOS器件 |
| 文件页数： | 1/10页 |
| 文件大小： | 178K |
| 代理商： | IRF530FI |
IRF530NS/L
HEXFET
Power MOSFET
PD - 91352A
l
Advanced Process Technology
l
Surface Mount (IRF530NS)
l
Low-profile through-hole (IRF530NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
Description
V
DSS
=100V
R
DS(on)
= 0.11
I
D
= 17A
D2
TO-262
Parameter
Typ.
–––
–––
Max.
1.9
40
Units
R
θ
JC
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
17
12
60
3.8
79
0.53
± 20
150
A
7.9
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current9.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
mJ
V/ns
-55 to + 175
300 (1.6mm from case )
°C
S
D
G
5/13/98
1
相关PDF资料 |
PDF描述 |
|---|---|
| IRF530 | N-CHANNEL POWER MOSFETS |
| IRF530 | N-Channel Power MOSFETs Avalanche Energy Rated |
| IRF530R | N-Channel Power MOSFETs Avalanche Energy Rated |
| IRF530PBF | Dynamic dv/dt Rating, Fast Switching, Ease of Paralleling, Simple Drive Requirements |
| IRF530 | Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF530FP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| IRF530H | 制造商:HAR 功能描述:IRF530 HARRIS NOTES |
| IRF530L | 功能描述:MOSFET N-CH 100V 14A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF530N | 制造商:International Rectifier 功能描述:MOSFET N TO-220 |
| IRF530N,127 | 功能描述:MOSFET N-CH 100V 17A TO-220AB RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。