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参数资料
| 型号： | IRF630NSTRR |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 9.3AI（四）|对263AB |
| 文件页数： | 2/11页 |
| 文件大小： | 155K |
| 代理商： | IRF630NSTRR |
www.irf.com
2
IRF630N/S/L
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 5.4A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.4A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
117
542
1.3
176
813
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
9.3
37
A
Parameter
Min. Typ. Max. Units
200
–––
–––
0.26
–––
–––
2.0
–––
4.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.9
–––
14
–––
27
–––
15
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.4A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 5.4A
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 5.4A
V
DS
= 160V
V
GS
= 10V
V
DD
= 100V
I
D
= 5.4A
R
G
= 13
R
D
= 18
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.30
4.0
–––
25
250
100
-100
35
6.5
17
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
575
89
25
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
–––
Max.
1.83
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
°C/W
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