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参数资料
| 型号： | IRF520 |
| 厂商： | Supertex, Inc. |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
| 中文描述： | ? -通道增强型立式DMOS功率场效应管 |
| 文件页数： | 1/10页 |
| 文件大小： | 185K |
| 代理商： | IRF520 |
IRF520NS/L
HEXFET
Power MOSFET
PD -91340A
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520NL) is available for low-profile applications.
S
D
G
Description
5/13/98
Parameter
Typ.
–––
–––
Max.
3.1
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
9.7
6.8
38
3.8
48
0.32
± 20
91
5.7
4.8
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l
Advanced Process Technology
l
Surface Mount (IRF520NS)
l
Low-profile through-hole (IRF520NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
D2
TO-262
V
DSS
= 100V
R
DS(on)
= 0.20
I
D
= 9.7A
相关PDF资料 |
PDF描述 |
|---|---|
| IRF520N | Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) |
| IRF520PBF | HEXFET Power MOSFET |
| IRF520VPBF | HEXFET㈢ Power MOSFET |
| IRF520V | Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) |
| IRF5210L | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF520_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF520A | 功能描述:MOSFET 9.2A 100V .4 OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF520CHIP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | CHIP |
| IRF520FI | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| IRF520L | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) |
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