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参数资料
型号： IRF530PBF
厂商： International Rectifier
英文描述： Dynamic dv/dt Rating, Fast Switching, Ease of Paralleling, Simple Drive Requirements
中文描述： 动态dv / dt的评级，快速切换，对并联，轻松简单驱动需求
文件页数： 2/10页
文件大小： 178K
代理商： IRF530PBF
IRF530NS/L
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 9.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.0A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
130
650
1.3
190
970
V
ns
nC
Parameter
Min. Typ. Max. Units
100
–––
–––
0.12
–––
–––
2.0
–––
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.4
–––
27
–––
37
–––
25
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 9.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 9.0A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 9.0A
V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 9.0A
R
G
= 12
R
D
= 5.5
, See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
DV
(BR)DSS
/DT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.11
4.0
–––
25
250
100
-100
44
6.2
21
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
640
160
88
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
Starting T
J
= 25°C, L = 3.1mH
R
G
= 25W, I
AS
= 9.0A. (See Figure 12)
I
SD
≤
9.0A, di/dt
≤
180A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRF530N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Source-Drain Ratings and Characteristics
S
D
G
17
60
A
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相关代理商/技术参数
参数描述
IRF530R 制造商:IR 功能描述:IRF530
IRF530S 功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF530SPBF 功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF530STRL 功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF530STRLPBF 功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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