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参数资料
| 型号： | IRF6603 |
| 厂商： | International Rectifier |
| 文件页数： | 8/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 27A DIRECTFET |
| 其它有关文件： | DirectFET MOSFET 4Ps Checklist |
| 产品变化通告： | (EP) Parts Discontinuation 25/May/2012 |
| 产品目录绘图： | IR Hexfet Circuit |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 27A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.4 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 72nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 6590pF @ 15V |
| 功率 - 最大： | 3.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DirectFET? 等容 MT |
| 供应商设备封装： | DIRECTFET? MT |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRF6603 IRF6603CT |
IRF6603
Power MOSFET Selection for Non-Isolated DC/DC Converters
P loss = P conduction + P drive + P output
( )
P loss = I rms × R ds(on)
+ ? oss × V in × f + ( Q rr × V in × f )
Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the R ds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
Power losses in the control switch Q1 are given
by;
P loss = P conduction + P switching + P drive + P output
This can be expanded and approximated by;
Synchronous FET
The power loss equation for Q2 is approximated
by;
*
2
+ ( Q g × V g × f )
? Q ?
? 2 ?
P loss = ( I rms × R ds(on ) )
× V in × f ?
2
? Q gd ? ?
+ ? I × × V in × f ? + ? I ×
? i g ? ?
Q gs 2
i g
?
?
*dissipated primarily in Q1.
For the synchronous MOSFET Q2, R ds(on) is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
× V in × f ?
? Q oss
? 2
?
+ ( Q g × V g × f )
+
This simplified loss equation includes the terms Q gs2
and Q oss which are new to Power MOSFET data sheets.
Q gs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Q gs1 and Q gs2 , can be seen from
Fig 16.
Q gs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached and the time the drain cur-
rent rises to I dmax at which time the drain voltage be-
gins to change. Minimizing Q gs2 is a critical factor in
reducing switching losses in Q1.
Q oss is the charge that must be supplied to the out-
put capacitance of the MOSFET during every switch-
ing cycle. Figure A shows how Q oss is formed by the
parallel combination of the voltage dependant (non-
linear) capacitance?s C ds and C dg when multiplied by
the power supply input buss voltage.
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q oss and re-
verse recovery charge Q rr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and V in . As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q gd /Q gs1 must be minimized to reduce the
potential for Cdv/dt turn on.
8
Figure A: Q oss Characteristic
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF6603TR1 | 功能描述:MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6604 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6604TR1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6607 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6607TR1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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