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参数资料
| 型号： | IRF6616 |
| 厂商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件页数： | 1/9页 |
| 文件大小： | 274K |
| 代理商： | IRF6616 |
www.irf.com
1
11/16/05
IRF6616
Power MOSFET
DirectFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.32mH, R
G
= 25
, I
AS
=15A.
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
A
mJ
A
Max.
40
15
106
150
36
15
±20
19
0
10
20
30
40
QG Total Gate Charge (nC)
0
1
2
3
4
5
6
VG
VDS= 32V
VDS= 20V
ID= 15A
Description
The IRF6616 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve low
combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be
used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.
MQ
MX
MT
MP
DirectFET
ISOMETRIC
V
DSS
40V max
Q
g tot
29nC
V
GS
R
DS(on)
3.7m
@ 10V
Q
gs2
2.4nC
R
DS(on)
4.6m
@ 4.5V
Q
oss
V
gs(th)
15nC
±20V max
Q
gd
9.4nC
Q
rr
33nC
1.8V
RoHS compliant containing no lead or bormide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
0
2.0
4.0
6.0
8.0
10
12
TD
)
TJ = 25°C
TJ = 125°C
ID = 19A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF6616TR1 | 功能描述:MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6616TR1PBF | 功能描述:MOSFET MOSFT 40V 106A 5.0mOhm 29nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6616TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6616TRPBF | 功能描述:MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6617 | 功能描述:MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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