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参数资料
| 型号： | IRF6691 |
| 厂商： | International Rectifier |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 32A DIRECTFET |
| 其它有关文件： | DirectFET MOSFET 4Ps Checklist |
| 产品目录绘图： | IR Hexfet Circuit |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.8 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 71nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 6580pF @ 10V |
| 功率 - 最大： | 2.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DirectFET? 等容 MT |
| 供应商设备封装： | DIRECTFET? MT |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRF6691 IRF6691CT |
PD - 95867D
IRF6691
HEXFET ? Power MOSFET plus Schottky Diode
l Application Specific MOSFETs
l Integrates Monolithic Trench Schottky Diode
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
V DSS
20V
R DS(on) max
2.5m ? @V GS = 4.5V
1.8m ? @V GS = 10V
Qg(typ.)
47nC
l Low Reverse Recovery Losses
l Low Switching Losses
l Low Reverse Recovery Charge and Low Vf
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
MT
DirectFET ? ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6691 combines IR?s industry leading DirectFET package technology with the latest monolithic die technology,
which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal
resistance by 80%.
The IRF6691 is characterized with reduced on resistance (R DS(on) ), reverse recovery charge (Q rr ) and source to drain
voltage (V SD ) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high
Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of proces-
sors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous
MOSFET sockets operating in 12 volt buss converters.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T C = 25°C
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
P D @T C = 25°C
T J
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
20
±12
180
32
26
260
2.8
1.8
89
0.022
-40 to + 150
V
A
W
W/°C
°C
T STG Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
R θ JA
Junction-to-Ambient
Junction-to-Ambient
–––
12.5
45
–––
R θ JA
R θ JC
R θ J-PCB
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
20
–––
1.0
–––
1.4
–––
°C/W
Notes ? through ? are on page 10
www.irf.com
1
11/16/05
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF6691TR1 | 功能描述:MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6691TR1PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6691TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6691TRPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6691TRPBF-EL | 制造商:International Rectifier 功能描述: |
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