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参数资料
| 型号： | IRF7105 |
| 厂商： | Microsemi Corporation |
| 英文描述： | EVALUATION KIT |
| 中文描述： | 评估板 |
| 文件页数： | 15/18页 |
| 文件大小： | 339K |
| 代理商： | IRF7105 |
LXE1710 E
VALUATION
B
OARD
PCB L
AYOUT
R
ECOMMENDATIONS
Like most analog circuits, component placement,
signal routing, and power/ground isolation can affect
the overall performance of the design. The layout
should utilize individual ground traces/planes for the
audio amplifier whenever possible. The audio input
and controller ground, FET ground, and output filter
ground are routed using a “star” connection in the
LXE1710 evaluation board. See PCB layer views.
The power to the controller IC should be routed using
separate traces that do not carry high current pulses
U
SER
G
UIDE
Microsemi
Linfinity Microelectronics Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 15
Copyright
2000
Rev. 1.1, 2000-12-01
from the switching circuit. In general, minimizing the
high frequency, high power currents from flowing
through the same copper as the audio signal
references are recommended. Signal traces that
could be sensitive to noise should be node to node
connections (no “shared” traces). Stray capacitance at
the controller pins RPWM, EAOUT, EAIN, and FAOUT
can affect the circuit performance and components
associated with these pins should be placed as close
to the controller IC as possible.
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相关代理商/技术参数 |
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| IRF7105PBF | 功能描述:MOSFET 25V DUAL N / P CH 20 VGS MAX V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7105Q9BF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET POWER MOSFET |
| IRF7105QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7105QPBF_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPOWERMOSFET |
| IRF7105QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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