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参数资料
| 型号： | IRF7241 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/9页 |
| 文件大小： | 178K |
| 代理商： | IRF7241 |
Parameter
Max.
-40
-6.2
-4.9
-25
2.5
1.6
20
± 20
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
1/26/01
www.irf.com
1
IRF7241
HEXFET
Power MOSFET
PD- 94087
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
V
DSS
-40V
R
DS(on)
max (m
41@V
GS
= -10V
70@V
GS
= -4.5V
)
I
D
-6.2A
-5.0A
SO-8
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
50
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
New trench HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
G
Trench Technology
G
Ultra Low On-Resistance
G
P-Channel MOSFET
G
Available in Tape & Reel
Description
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PDF描述 |
|---|---|
| IRF7304 | Generation V Technology |
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| IRF7309 | HEXFET Power MOSFET |
| IRF7313PBF | HEXFET Power MOSFET |
| IRF7313 | HEXFET POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7241HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 40V 6.2A 8-Pin SOIC |
| IRF7241PBF | 功能描述:MOSFET 1 P-CH -40V HEXFET 41mOhms 53nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7241TR | 功能描述:MOSFET P-CH 40V 6.2A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF7241TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 40V 6.2A 8-Pin SOIC T/R |
| IRF7241TRPBF | 功能描述:MOSFET MOSFT PCh -40V -6.2A 41mOhm 53nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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