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| 型号： | IRF7304 |
| 厂商： | International Rectifier |
| 英文描述： | Generation V Technology |
| 中文描述： | 一代V技术 |
| 文件页数： | 1/6页 |
| 文件大小： | 243K |
| 代理商： | IRF7304 |
IRF7304
HEXFET
Power MOSFET
PD - 9.1240B
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
PRELIMINARY
Absolute Maximum Ratings
SO-8
Thermal Resistance
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
V
DSS
= -20V
R
DS(on)
= 0.090
Parameter
Min.
––––
Typ.
––––
Max.
90
Units
°C/W
R
θ
JA
Junction-to-Amb. (PCB Mount, steady state)**
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Parameter
Max.
-4.0
-3.6
-2.9
-14
1.4
0.011
±8.0
-1.2
Units
A
A
A
A
W
W/°C
V
V/ns
°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
10 Sec. Pulsed Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V
GS
dv/dt
T
J,
T
STG
-55 to + 150
127
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7304HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 4.3A 8-Pin SOIC |
| IRF7304PBF | 功能描述:MOSFET DUAL -20V P-CH 12 VGS MAX RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7304PBF_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPOWERMOSFET |
| IRF7304QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7304QPBF_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET POWER MOSFET |
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