- 您现在的位置：买卖IC网 > PDF目录384491 > IRF7309 (International Rectifier) HEXFET Power MOSFET PDF资料下载
参数资料
| 型号： | IRF7309 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 162K |
| 代理商： | IRF7309 |
Parameter
Max.
Units
N-Channel
4.7
4.0
3.2
16
P-Channel
-3.5
-3.0
-2.4
-12
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
10 Sec. Pulse Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
A
A
A
W
1.4
0.011
± 20
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Thermal Resistance
6.9
-6.0
-55 to + 150
IRF7309
HEXFET
Power MOSFET
PD - 9.1243B
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
PRELIMINARY
Absolute Maximum Ratings
SO-8
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter
Min.
––––
Typ.
––––
Max.
90
Units
°C/W
R
θ
JA
Junction-to-Amb. (PCB Mount, steady state)**
D1
N-CHANNEL MOSFET
1
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
2
3
4
5
6
7
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
N-Ch
P-Ch
V
DSS
30V
-30V
R
DS(on)
0.050
0.10
147
相关PDF资料 |
PDF描述 |
|---|---|
| IRF7313PBF | HEXFET Power MOSFET |
| IRF7313 | HEXFET POWER MOSFET |
| IRF7317 | LED, LOW CURRENT, 5MM |
| IRF7319 | HEXFET?? Power MOSFET |
| IRF7321D2PBF | FETKY MOSFET & Schottky Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7309HR | 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 30V 4A/3A 8SOIC - Rail/Tube |
| IRF7309IPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7309PBF | 功能描述:MOSFET 30V DUAL N / P CH 20V VGS MAX RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7309QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7309QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。