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参数资料
| 型号： | IRF7201 |
| 厂商： | International Rectifier |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7.3A 8-SOIC |
| 标准包装： | 95 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 7.3A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
| 其它名称： | *IRF7201 |
PD- 91100D
IRF7201
HEXFET ? Power MOSFET
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
S
S
S
G
1
2
3
4
8
7
6
5
A
A
D
D
D
D
V DSS = 30V
R DS(on) = 0.030 ?
l Fast Switching
Description
Fifth Generation HEXFET ? power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Top View
SO-8
Parameter
Max.
Units
V DS
I D @ T C = 25°C
I D @ T C = 70°C
I DM
P D @T C = 25°C
P D @T C = 70°C
V GS
V GSM
E AS
dv/dt
T J, T STG
Drain- Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10μs
Single Pulse Avalanche Energy ?
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
30
7.3
5.8
58
2.5
1.6
0.02
± 20
30
70
5.0
-55 to + 150
V
A
W
W/°C
V
V
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
Maximum Junction-to-Ambient ?
–––
50
°C/W
www.irf.com
1
08/15/03
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7201HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC |
| IRF7201PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 30mOhms 19nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7201TR | 功能描述:MOSFET N-CH 30V 7.3A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF7201TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 7.3A 8SOIC - Tape and Reel |
| IRF7201TRPBF | 功能描述:MOSFET MOSFT 30V 7A 30mOhm 19nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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