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参数资料
| 型号： | IRF7317 |
| 厂商： | International Rectifier |
| 英文描述： | LED, LOW CURRENT, 5MM |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/10页 |
| 文件大小： | 156K |
| 代理商： | IRF7317 |
IRF7317
Surface mounted on FR-4 board, t
≤
10sec.
Parameter
Min. Typ. Max. Units
20
—
P-Ch -20
—
N-Ch
— 0.027
P-Ch
— 0.031
— 0.0230.029
— 0.0300.046
— 0.0490.058
— 0.0820.098
N-Ch 0.7
—
P-Ch -0.7
—
N-Ch
—
20
P-Ch
—
5.9
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-P
––
—
N-Ch
—
18
P-Ch
—
19
N-Ch
—
2.2
P-Ch
—
4.0
N-Ch
—
6.2
P-Ch
—
7.7
N-Ch
—
8.1
P-Ch
—
15
N-Ch
—
17
P-Ch
—
40
N-Ch
—
38
P-Ch
—
42
N-Ch
—
31
P-Ch
—
49
N-Ch
—
900
P-Ch
—
780
N-Ch
—
430
P-Ch
—
470
N-Ch
—
200
P-Ch
—
240
Conditions
N-Ch
—
—
—
—
V
GS
= 0V, I
D
= 250μA
V
= 0V, I
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 4.5V, I
D
= 6.0A
V
GS
= 2.7V, I
D
= 5.2A
V
GS
= -4.5V, I
D
= -2.9A
V
GS
= -2.7V, I
= -1.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 10V, I
D
= 6.0A
V
DS
= -10V, I
D
= -1.5A
V
DS
= 16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 55°C
V
DS
= -16V, V
GS
= 0V, T
J
= 55°C
V
GS
= ±12V
—
—
—
—
1.0
-1.0
5.0
-25
±100
27
29
3.3
6.1
9.3
12
12
22
25
60
57
63
47
73
—
—
—
—
—
—
I
GSS
Q
g
Gate-to-Source Forward Leakage
pF
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V/°C
V
S
μA
nC
ns
N-Channel
I
D
= 6.0A, V
DS
= 10V, V
GS
= 4.5V
P-Channel
I
D
= -2.9A, V
DS
= -16V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 1.0A, R
G
= 6.0
,
R
D
= 10
P-Channel
V
DD
= -10V, I
D
= -2.9A, R
G
= 6.0
,
R
D
= 3.4
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
N-Ch
P-Ch
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
0.72
—
-0.78 -1.0
—
52
—
47
—
58
—
49
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2.5
-2.5
26
-21
1.0
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
S
= -2.9A, V
GS
= 0V
N-Channel
T
= 25°C, I
F
=1.7A, di/dt = 100A/μs
P-Channel
T
J
= 25°C, I
F
= -2.9A, di/dt = 100A/μs
77
71
86
73
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel I
SD
≤
4.1A, di/dt
≤
92A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-2.9A, di/dt
≤
-77A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
N-Channel Starting T
J
= 25°C, L = 12mH R
G
= 25
, I
AS
= 4.1A. (See Figure 12)
P-Channel Starting T
J
= 25°C, L = 35mH R
G
= 25
, I
AS
= -2.9A.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
nA
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