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参数资料
| 型号： | IRF7350 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=+-100V) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d - 100V的） |
| 文件页数： | 8/16页 |
| 文件大小： | 238K |
| 代理商： | IRF7350 |
IRF7350
8
www.irf.com
Fig 19.
Typical Avalanche Current Vs.Pulsewidth
Fig 20.
Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25
°
C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·
f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3
·
BV
·
I
av
) =
T/ Z
thJC
I
av
=
2
T/ [1.3
·
BV
·
Z
th
]
E
AS (AR)
= P
D (ave)
·
t
av
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
tav (sec)
0.001
0.01
0.1
1
10
A
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25
°
C due to
avalanche losses
tav
0.05
Duty Cycle = Single Pulse
0.10
0.01
N-CHANNEL
25
50
75
100
125
150
Starting TJ , Junction Temperature (
°
C)
0
10
20
30
40
EA
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 4.2A
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相关代理商/技术参数 |
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|---|---|
| IRF7350 | 制造商:International Rectifier 功能描述:MOSFET DUAL NP LOGIC SO-8 |
| IRF7350HR | 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 100V 2.1A/1.5A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 2.1A/1.5A 8SOIC - Rail/Tube |
| IRF7350PBF | 功能描述:MOSFET 100V DUAL N- & P- CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7350PBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:2W |
| IRF7350TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 100V 2.1A/1.5A 8-Pin SOIC T/R |
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