参数资料
型号: IRF7406
厂商: International Rectifier
英文描述: HEXFET POWER MOSFET
中文描述: HEXFET功率MOSFET
文件页数: 9/9页
文件大小: 216K
代理商: IRF7406
www.irf.com
9
0
12
4.10 (.161)
3.90 (.154)
1.60 (.062)
1.50 (.059)
1.85 (.072)
1.65 (.065)
5.30 (.208)
5.10 (.201)
5.55 (.218)
5.45 (.215)
2.60 (.102)
1.50 (.059)
6.50 (.255)
6.30 (.248)
8.10 (.318)
7.90 (.311)
FEED DIRECTION
TERMINATION
NUMBER 1
2.05 (.080)
1.95 (.077)
0.35 (.013)
0.25 (.010)
12.30 (.484)
11.70 (.461)
2.20 (.086)
2.00 (.079)
15.40 (.607)
11.90 (.469)
2
50.00
(1.969)
MIN.
18.40 (.724)
MAX
3
14.40 (.566)
12.40 (.448)
3
330.00
(13.000)
MAX.
13.20 (.519)
12.80 (.504)
NOTES:
1 CONFORMS TO EIA-481-1
2 INCLUDES FLANGE DISTORTION @ OUTER EDGE
3 DIMENSIONS MEASURED @ HUB
4 CONTROLLING DIMENSION : METRIC
1
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
06/03
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IRF7406HR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 30V 5.8A 8SOIC - Rail/Tube
IRF7406PBF 功能描述:MOSFET 1 P-CH -30V HEXFET 45mOhms 39.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7406TR 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -30V, -5.8A, 45 mOhm, 39.3 nC Qg, SO-8
IRF7406TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R