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参数资料
| 型号： | IRF740S |
| 厂商： | 意法半导体 |
| 英文描述： | N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET) |
| 中文描述： | N沟道400V -0.48Ω- 10A条，采用D2PAK PowerMESHTM MOSFET的（不适用沟道MOSFET的） |
| 文件页数： | 3/8页 |
| 文件大小： | 93K |
| 代理商： | IRF740S |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 200 V
R
G
= 4.7
(see test circuit, figure 1)
V
DD
= 320 V
I
D
= 5 A
V
GS
= 10 V
17
10
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 10.7 A V
GS
= 10V
35
11
12
43
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 320 V
R
G
= 4.7
(see test circuit, figure 3)
I
D
= 10 A
V
GS
= 10 V
10
10
17
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
10
40
A
A
V
SD
(
)
I
SD
= 10 A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
=10 A
V
DD
= 100 V
(see test circuit, figure 3)
di/dt = 100 A/
μ
s
T
j
= 150
o
C
370
3.2
17
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimited by safe operating area
Safe OperatingArea
Thermal Impedance
IRF740S
3/8
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相关代理商/技术参数 |
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|---|---|
| IRF740S2515 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF740SPBF | 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF740ST4 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-263AB |
| IRF740STRL | 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF740STRLPBF | 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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