型号: | IRF840 |
厂商: | MOTOROLA INC |
元件分类: | JFETs |
英文描述: | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
中文描述: | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
文件页数: | 1/2页 |
文件大小: | 80K |
代理商: | IRF840 |
相关PDF资料 |
PDF描述 |
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IRF841 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
IRF842 | RES 1M-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA |
IRF843 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
IRF9540-017PBF | 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
IRF740-030PBF | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
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IRF840 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
IRF840_02 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.75ヘ - 8A TO-220 PowerMesh⑩II MOSFET |
IRF840_R4943 | 功能描述:MOSFET N-CH POWER RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
IRF8401111 | 制造商:IRF 制造商全称:International Rectifier 功能描述:TRANSISTORS N-CHANNEL |
IRF84093 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |