参数资料
型号: IRF9392TRPBF
厂商: International Rectifier
文件页数: 1/8页
文件大小: 0K
描述: MOSFET P-CH 30V 9.8A 8SOIC
标准包装: 4,000
系列: HEXFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 9.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 12.1 毫欧 @ 7.8A,20V
Id 时的 Vgs(th)(最大): 2.4V @ 25µA
闸电荷(Qg) @ Vgs: 14nC @ 4.5V
输入电容 (Ciss) @ Vds: 1270pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: SO-8
包装: 带卷 (TR)
PD - 97571
IRF9392PbF
HEXFET ? Power MOSFET
V DS
V GS max
R DS(on) max
(@V GS = -10V)
-30
±25
17.5
V
V
m ?
I D
(@T A = 25°C)
-9.8
A
SO-8
Applications
? Adaptor Input Switch for Notebook PC
Features and Benefits
Features
25V V GS max
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Direct Drive at High V GS
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
Package Type
Standard Pack
Note
Form Quantity
IRF9392PbF
IRF9392TRPbF
Absolute Maximum Ratings
SO8
SO8
Tube/Bulk 95
Tape and Reel 4000
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ -10V
Continuous Drain Current, V GS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
-30
±25
-9.8
-7.8
-80
2.5
1.6
0.02
-55 to + 150
V
A
W
W/°C
°C
Notes ? through ? are on page 2
www.irf.com
1
09/30/2010
相关PDF资料
PDF描述
IRF9410PBF MOSFET N-CH 30V 7A 8-SOIC
IRF9410TR MOSFET N-CH 30V 7A 8-SOIC
IRF9520NLPBF MOSFET P-CH 100V 6.8A TO262-3
IRF9520NSTRR MOSFET P-CH 100V 6.8A D2PAK
IRF9530NSTRR MOSFET P-CH 100V 14A D2PAK
相关代理商/技术参数
参数描述
IRF9393PBF 功能描述:MOSFET 1 P-CH -30V HEXFET 19.4mOhms 14nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF9393TRPBF 功能描述:MOSFET MOSFT PCh -30V -9.2A 19.4mOhm 25Vgs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF9395MPBF 制造商:IRF 制造商全称:International Rectifier 功能描述:Isolation Switch for Input Power or Battery Application
IRF9395MTR1PBF 功能描述:MOSFET DUAL -30V P-CH 20V VGS MAX RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF9395MTRPBF 功能描述:MOSFET DUAL P-CH -30V 7mOhms 64nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube