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参数资料
| 型号： | IRF9520NSTRL |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 6.8A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 480 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
PD -91522A
IRF9520NS/L
HEXFET ? Power MOSFET
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Advanced Process Technology
Surface Mount (IRF9520S)
Low-profile through-hole (IRF9520L)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
G
D
S
V DSS = -100V
R DS(on) = 0.48 ?
I D = -6.8A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D 2 Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9520L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
D 2 Pak
Max.
T O -26 2
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ -10V ?
-6.8
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ -10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
-4.8
-27
3.8
48
0.32
± 20
140
-4.0
4.8
-5.0
A
W
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
3.1
40
°C/W
5/13/98
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF9520NSTRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.8A 3PIN D2PAK - Tape and Reel |
| IRF9520NSTRLPBF | 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -100V, -6.8A, 480 MOHM, 18 NC QG, D2-PAK 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.8A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.8A 3PIN D2PAK - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET P 100V D2-PAK 制造商:International Rectifier 功能描述:MOSFET, P, 100V, D2-PAK 制造商:International Rectifier 功能描述:MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes |
| IRF9520NSTRR | 功能描述:MOSFET P-CH 100V 6.8A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF9520NSTRRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.8A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.8A 3PIN D2PAK - Tape and Reel |
| IRF9520NSTRRPBF | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.8A 3PIN D2PAK - Tape and Reel |
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