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参数资料
| 型号： | IRF9540NL |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 23A TO-262 |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 23A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 117 毫欧 @ 11A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 97nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1300pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
| 其它名称： | *IRF9540NL |
PD - 91483E
V DSS = -100V
TO-262
D Pak
l AdvancedProcessTechnology
l Surface Mount (IRF9540NS)
l Low-profile through-hole (IRF9540NL)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D 2 Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9540L) is available for low-
profile applications.
Absolute Maximum Ratings
G
IRF9540NS/L
HEXFET ? Power MOSFET
D
R DS(on) = 0.117 ?
I D = -23A
S
2
Parameter
Max.
Units
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
T J
T STG
Continuous Drain Current, V GS @ -10V ?
Continuous Drain Current, V GS @ -10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-23
-16
-76
3.8
140
0.91
± 20
430
-11
14
-5.0
-55 to + 175
300 (1.6mm from case )
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
???
???
1.1
40
°C/W
03/11/03
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF9540NLPBF | 功能描述:MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF9540NPBF | 功能描述:MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF9540NS | 制造商:International Rectifier 功能描述:MOSFET P D2-PAK 制造商:International Rectifier 功能描述:Single P-Channel 100 V 3.8 W 97 nC Hexfet Power Mosfet Surface Mount - D2PAK-3 |
| IRF9540NS/L | 制造商:IRF 制造商全称:International Rectifier 功能描述:Advanced Process Technology |
| IRF9540NSHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 23A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 23A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -100V, -23A,D2pak |
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