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参数资料
| 型号： | IRFD320 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d为400V，的Rds（on）\u003d 1.8ohm，身份证\u003d 0.49A） |
| 文件页数： | 2/8页 |
| 文件大小： | 478K |
| 代理商： | IRFD320 |
Parameter
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min. Typ. Max. Units Conditions
400
—
—
—
0.51
—
—
—
1.8
—
—
2.0
—
4.0
1.7
—
—
—
—
25
—
—
250
—
—
100
—
—
-100
—
—
20
—
—
3.3
—
—
11
—
10
—
—
14
—
—
30
—
—
13
—
—
4.0
—
V
(BR)DSS
V
V
GS
= 0V, ID = 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10.0V, I
D
= 0.21A
V
GS
= V, I
D
= A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 1.2A
V
DS
= 400V, V
GS
= 0V
V
DS
= 320V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 2.0A
V
DS
= 320V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 200V
I
D
= 3.3A
R
G
= 18
R
D
= 56
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of
die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V/°C
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
V
S
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
L
S
Internal Source Inductance
—
6.0
—
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
410
120
47
—
—
—
pF
IRFD320
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units Conditions
I
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 0.49A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.3A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
—
—
—
—
270
1.4
1.6
600
3.0
V
ns
μC
V
DD
= 50V, starting T
J
= 25°C, L = 21mH
R
G
= 25
, I
AS
= 2.0A. (See Figure 12)
I
SD
≤
2.0A, di/dt
≤
40A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
—
—
3.9
—
—
0.49
A
ns
nA
μA
nH
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相关代理商/技术参数 |
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|---|---|
| IRFD320PBF | 功能描述:MOSFET N-Chan 400V 0.49 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFD320R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR |
| IRFD321 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFD321R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR |
| IRFD322 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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