- 您现在的位置：买卖IC网 > PDF目录377508 > IRFD320 (HARRIS SEMICONDUCTOR) 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET PDF资料下载
参数资料
| 型号： | IRFD320 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET |
| 中文描述： | 500 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 478K |
| 代理商： | IRFD320 |
Parameter
Max.
0.49
0.31
3.9
1.0
0.0083
±20
48
0.49
0.10
4.0
-55 to + 150
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10 V
Continuous Drain Current, V
GS
@ 10 V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
°C
300 (1.6mm from case)
IRFD320
HEXFET
Power MOSFET
PD -9.1226
Revision 0
V
DSS
= 400V
R
DS(on)
= 1.8
I
D
= 0.49A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Min.
—
Typ.
—
Max.
120
Units
°C/W
R
θ
JA
Junction-to-Ambient
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
Simple Drive Requirements
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
Description
HD-1
Next Data Sheet
Index
Previous Datasheet
To Order
相关PDF资料 |
PDF描述 |
|---|---|
| IRFD9113 | RES 137 OHM 1/4W 1% 1206 SMD |
| IRFD9113 | -0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs |
| IRFDC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A) |
| IRFE210 | HEXFET Transistor(HEXFET 晶体管) |
| IRFE9210 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFD320PBF | 功能描述:MOSFET N-Chan 400V 0.49 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFD320R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR |
| IRFD321 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFD321R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR |
| IRFD322 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
发布紧急采购，3分钟左右您将得到回复。