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参数资料
| 型号： | IRFD9110 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d- 100V的，的Rds（on）\u003d 1.2ohm，身份证\u003d- 0.70A） |
| 文件页数： | 4/7页 |
| 文件大小： | 93K |
| 代理商： | IRFD9110 |
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s is minimal.
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
-1
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-10
-2
-3
I
D
,
-4
-8
-5
V
GS
= -5V
V
GS
= -7V
V
GS
= -8V
V
GS
= -9V
V
GS
= -10V
V
GS
= -6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-12.0
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-9.6
-7.2
-4.8
0
-8
-6
-4
-2
0
-10
-2.4
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
2
5
-1
-2
D
)
I
D
, DRAIN CURRENT (A)
-3
1
3
4
V
GS
= -10V
V
GS
= -20V
2
μ
s PULSE TEST
0
N
2.5
1.5
1.0
0.5
0
-40
0
T
J
, JUNCTION TEMPERATURE (
o
C)
40
120
160
2.0
80
V
GS
= -10V, I
D
= -0.3A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
1.25
0.95
0.85
0.75
-40
0
T
J
, JUNCTION TEMPERATURE (
o
C)
40
N
B
80
120
160
1.05
1.15
I
D
= 250
μ
A
500
100
00
-20
-50
C
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
400
200
-10
-30
C
ISS
C
OSS
C
RSS
-40
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
IRFD9110
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